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高頻測量設備

      On wafer (6-inch) GSG measurement for Lateral devices

            HEMT, HBT, diode, and others

      I-V, [s] measurement, pulse I-V (B1530A WGFMU/B1525A High Voltage SPGU )

      E5063A ENA Series Network Analyzer

            2-port 100K to 18 GHz

      變溫系統

            25 - 300 °C

      Bias-T capability

            Auriga BT0110-50 (3 A, 50 W, 100 V, 0.1-10 GHz)

            Auriga BT1026-1 (2 A, 1 W, 150 V, 0.1-26.5 GHz)

            Agilent 11612V K11 (2A, 2 W, 40 V, 45 M-50 GHz)

中電壓/中電流測量設備B1500A

      On wafer (6-inch) measurement for Lateral devices

            HEMT, HBT, diode, and others

      I-V, C-V

            100 V (3000V) capability

            100 mA capability

      變溫系統

            25 - 300 °C

中電壓/中電流測量設備B1500A安裝模組

      B1525A High Voltage SPGU (semiconductor pulse generator unit)

            5 ms 10 s, ±40 V, 400 mA. 0.4 mV resolution, 10 ns resolution

      B1520A MFCMU Multi Frequency CMU

            1 kHz to 5 MHz. 0 to ±25 V, using MFCMU internal DC bias

            0 to ±3000 V , using HVSMU and high voltage bias-tee

      B1511A MPSMU Medium Power SMU ´ 4

            Up to 100 V, 100 mA force, 10 fA current resolution

      B1510A HPSMU High Power SMU

            Up to 200 V, 1 A force. 10 fA current resolution

      B1530A WGFMU waveform generator/fast measurement unit

            300 ns (Fast IV Mode), 10 ns programmable resolution

            10V peak-to-peak output, 10 mA, 2 nA current resolution (1 mA range)

高電壓/高電流測量設備B1505A系統 (B1506A)

      On wafer (8-inch) device measurements

            Cascade T200M-STA-M probe station

            Vertical transistors (IGBT, MOSFET), diodes (PIN diode, Schottky diode)

            Lateral transistor, diodes (GaN HEMT, GaAs HEMT/HNT),

      I-V, C-V, pulse I-V, dynamic Ron, Gate Charge

      3000 V capability

      ±500 A / 60 V (Pulsed)

      變溫系統

            20 - 300 °C

      Package devices

            transistors

高電壓/高電流測量設備B1505A安裝模組

      B1513B HVSMU High Voltage SMU

            1500 V/8 mA; 3000 V/4 mA; (Pulsed & DC)

      B1512A HCSMU High Current SMU ´ 2 模組

            20 A/20 V (Pulsed); 1 A/40 V (DC)

            The current ranges can be increased to 40 A/20 V (pulsed) and 2 A/40 V (DC) using two HCSMUs with the Dual HCSMU combination adapter.

      B1514A MCSMU Medium Current SMU

            1 A/30 V (Pulsed); 100 mA/30 V (DC)

      B1520A MFCMU Multi Frequency CMU

            1 kHz to 5 MHz. 0 to ±25 V, using MFCMU internal DC bias

            0 to ±3000 V , using HVSMU and high voltage bias-tee

      B1510A HPSMU High Power SMU

            Up to 200 V, 1 A force. 10 fA current resolution

      N1259A: Test fixture for packaged device measurements

      N1265A Ultra High Current Expander/Fixture:

            ±500 A / 60 V (Pulsed), 7.5 kW peak power

      N1267A: HVSMU/HCSMU Fast Switch

            Dynamic Ron measurement

      N1274A On-Wafer Gate Charge Measurement Adapter/Selector for 20 A/3 kV

      N1258A module selector

PD1500A Series Dynamic Power Device Analyzer/Double-Pulse Tester

      discrete IGBT, SiC, and GaN devices

      Characterize 650 V, 1.2 kV, and 1.7 kV-rated discrete devices

      Current up to 200 A

      Turn-On Characteristics

      Turn-Off Characteristics

      Switching Characteristics

      Reverse Recovery

      Gate Charge

      Dynamic Ron