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高頻測量設備 •
On wafer (6-inch) GSG measurement for Lateral devices
HEMT, HBT, diode, and others •
I-V, [s] measurement, pulse I-V (B1530A
WGFMU/B1525A High Voltage SPGU ) •
E5063A ENA Series Network Analyzer
2-port 100K to 18 GHz •
變溫系統
25 - 300 °C •
Bias-T capability
Auriga BT0110-50 (3 A, 50 W, 100 V, 0.1-10 GHz)
Auriga BT1026-1 (2 A, 1 W, 150 V, 0.1-26.5 GHz)
Agilent 11612V K11 (2A, 2 W, 40 V, 45 M-50 GHz) 中電壓/中電流測量設備B1500A •
On wafer (6-inch) measurement for Lateral devices
HEMT, HBT, diode, and others •
I-V, C-V
100 V (3000V) capability
100 mA capability •
變溫系統
25 - 300 °C 中電壓/中電流測量設備B1500A安裝模組 •
B1525A High Voltage SPGU (semiconductor pulse generator
unit)
5 ms – 10 s, ±40 V, 400 mA. 0.4 mV resolution, 10 ns resolution •
B1520A MFCMU Multi Frequency CMU
1 kHz to 5 MHz. 0 to ±25 V, using MFCMU internal DC bias
0 to ±3000 V , using HVSMU and high voltage
bias-tee •
B1511A MPSMU Medium Power SMU ´ 4 組
Up to 100 V, 100 mA force, 10 fA current resolution •
B1510A HPSMU High Power SMU
Up to 200 V, 1 A force. 10 fA current resolution •
B1530A WGFMU waveform generator/fast measurement unit
300 ns (Fast IV Mode), 10 ns programmable resolution
10V peak-to-peak output, 10 mA, 2 nA current resolution
(1 mA range) 高電壓/高電流測量設備B1505A系統 (B1506A) •
On wafer (8-inch) device measurements
Cascade T200M-STA-M probe station
Vertical transistors (IGBT, MOSFET), diodes (PIN diode,
Schottky diode)
Lateral transistor, diodes (GaN HEMT, GaAs HEMT/HNT), •
I-V, C-V, pulse I-V, dynamic Ron, Gate Charge •
3000 V capability •
±500 A / 60 V (Pulsed) •
變溫系統
20 - 300 °C •
Package devices
transistors 高電壓/高電流測量設備B1505A安裝模組 •
B1513B HVSMU High Voltage SMU
1500 V/8 mA; 3000 V/4 mA; (Pulsed &
DC) •
B1512A HCSMU High Current SMU ´ 2 模組
20 A/20 V (Pulsed); 1 A/40 V (DC)
The current ranges can be increased to 40 A/20 V
(pulsed) and 2 A/40 V (DC) using two HCSMUs with the Dual HCSMU combination
adapter. •
B1514A MCSMU Medium Current SMU
1 A/30 V (Pulsed); 100 mA/30 V (DC) •
B1520A MFCMU Multi Frequency CMU
1 kHz to 5 MHz. 0 to ±25 V, using MFCMU internal DC bias
0 to ±3000 V , using HVSMU and high voltage
bias-tee •
B1510A HPSMU High Power SMU
Up to 200 V, 1 A force. 10 fA current resolution •
N1259A: Test fixture for packaged device measurements •
N1265A Ultra High Current Expander/Fixture:
±500 A / 60 V (Pulsed), 7.5 kW peak power •
N1267A: HVSMU/HCSMU Fast Switch
Dynamic Ron measurement •
N1274A On-Wafer Gate Charge Measurement
Adapter/Selector for 20 A/3 kV •
N1258A module selector PD1500A Series Dynamic
Power Device Analyzer/Double-Pulse Tester •
discrete IGBT, SiC, and GaN devices •
Characterize 650 V, 1.2 kV, and 1.7 kV-rated discrete
devices •
Current up to 200 A •
Turn-On Characteristics •
Turn-Off Characteristics •
Switching Characteristics •
Reverse Recovery •
Gate Charge •
Dynamic Ron |
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