High-Fidelity and Noise-Resilient CNOT Gate Implementation Using Vertically Symmetric Fin-Based Architecture
Wei-Yuan Lai, Hua Yang, and Ying-Tsan Tang*
High-Storage, Low-Variability, and Low-Power Read-After-Write Superlattice HfO2/ZrO2 FeFET Memory Device by Using a Multifunctional MoOx/TiON Layer
Zheng-Kai Chen, Miau-Hua Hsiung, Zi-Rong Huang, Sheng-Min Wang, Cheng-Rui Liu, Yu-Ting Chen, Chia-Shuo Pai, Yu-Tzu Tsai, and Ying-Tsan Tang*
The Demonstration of Scalable-HZO/ZrO2 FeFET with Large Memory Window of 2.3V for 3bit-per-cell, Immediate Read after Write, High Endurance of 10⁹ cycles, and The Hight Accuracy of 92% for Machine Learning
S.-T. Huang, H.-M. Chen, Y.-T. Tsai, C.-S. Pai, Ying-Tsan Tang*
Enhanced Performance of P-FeFETs with TiN:2.5nm/Mo/TiN Gate Stacks for 3-Bit-Per-Cell Operation, 3.5V Read-After-Write, and High Endurance (10⁹ Cycles) in Compute-in-Memory Applications
C.-Y. Tsai, M. -H. Hsiung, Y. -C. Chen, Y. -T. Tsai and Ying-Tsan Tang*
Tunable Tunnel Coupling in Vertically Stacked Symmetric FinFET-Based Ge Double Quantum Dots
H. Yang, W. -Y. Lai and Ying-Tsan Tang*
Heterojunction Tunneling and Reverse Shockley-Read-Hall Recombination Effects in Si1-xGex Channel/Si SDE CFETs for Steeper Subthreshold Swing and Low DIBL
P. -L. Chang and Ying-Tsan Tang*
Reliability Analysis of CFETs Under Various NBTI Conditions
H. -T. Kung, N. Thoti, H. -P. Komsa and Ying-Tsan Tang*
Enhancing FeFET Performance through H2 Plasma Treatment: Improving Stability, Conductance, and Hamming Distances in FeCAM Designs
Z.-R. Huang, Z.-K. Chen, Y.-T. Tsai, C.-S. Pai, W.-N. Chang, C.-C. Lin, and Ying-Tsan Tang*
Improvement of memory storage capacity and prolongation of endurance/retention through H2 plasma treatment of IGZO/HZO structure
Cheng-Rui Liu, Yu-Tzu Tsai, Yu-Ting Chen, Zheng-Kai Chen, Zi-Rong Huang, Sheng-Min Wang, Chia-Shuo Pai, and Ying-Tsan Tang*
The Simulation of Double Germanium Quantum Dots in a Ring-Shaped Quantum Structure
Cheng-En Liang, Ying-Tsan Tang*
Study of Spacing-induced Fringing Effects on Emerging CFET Technology Nodes
You-Zheng Chen, Narasimhulu Thoti, Ying-Tsan Tang*
Morphotropic Phase Boundary-Enhanced Polarization and High-Temperature Retention in Ferroeletric FET
Ying-Tsan Tang*, C.-S. Pai, Z.-R. Haung, Y.-T. Tsai, Z.-K. Chen
Enabling the wide memory window and long endurance in hafnia-based FeFET from the perspective of interfacial layer
Yu Tzu Tsai, Yu-Ting Chen, Cheng-Rui Liu, Sheng-Min Wang, Zheng-Kai Chen, Chia-shuo Pai, Zi-Rong Huang, Ying-Tsan Tang
Tunable defect engineering of Mo/TiON electrode in angstrom-laminated HfO2/ZrO2 ferroelectric capacitors towards long endurance and high temperature retention
Sheng-Min Wang, Cheng-Rui Liu, Yu-Ting Chen, Shao-Chen Lee, Ying-Tsan Tang
Atomistic simulations of thermal conductivity in novel GeC channel materials from first-principles molecular dynamics calculations
Shao-Chen Lee, Yu-Ting Chen, Cheng-Rui Liu, Sheng-Min Wang, Ying-Tsan Tang
3-bits-per-cell 2T32CFE nvTCAM by Angstrom-laminated Ferroelectric Layers with 10¹¹ Cycles of Endurance and 4.92V of Ultra-wide Memory-windows for In-memory-searching
ER Hsieh, YT Tang, CR Liu, SM Wang, YL Hsueh, RQ Lin, YX Huang, YT Chen
Ultra-Large Memory Window of 3.8V and 75% Read/Write Speed Improvement through Stressed Alumina and Angstrom-Laminated HfZrO2
Z-R Huang, S-M Wang, C-R Liu, Y-T Chen, Y-T Tsai, Z-K Chen, C-S Pai, YT Tang
Theoretical Study of High Performance Germanium Nanowire Quantum Dot
Han-Wei Yang, Yung-Feng Wu, Ming-Jung Hsu, Shao-Chen Lee, Ying-Tsan Tang
Physical Insights of Low Thermal Expansion Coefficient Electrode Stress Effect on Hafnia-Based Switching Speed
Y-T Tsai, C-R Liu, Y-T Chen, S-M Wang, Z-K Chen, C-S Pai, Z-R Haung, F-S Chang, Z-X Li, K-Y Hsiang, M-H Lee, YT Tang
Superlattice HfO 2-ZrO2 based Ferro-Stack HfZrO2 FeFETs: Homogeneous-Domain Merits Ultra-Low Error, Low Programming Voltage 4 V and Robust Endurance 10 9 cycles for Multibit NVM
C.-Y. Liao... Ying-Tsan Tang, S.-T. Chang, C.-W. Liu, S. Maikap, M.-H. Lee
Highly Reliable, Scalable, and High-Yield HfZrOx FRAM by Barrier Layer Engineering and Post-Metal Annealing
Yu-De Lin... Ying-Tsan Tang, Tuo-Hung Hou, Shyh-Shyuan Sheu, Wei-Chung Lo, Shih-Chieh Chang
van der Waals epitaxy of 2D h-AlN on TMDs by atomic layer deposition at 250 °C
Chenming Hu, Shu-Jui Chang, Shin-Yuan Wang, Yu-Che Huang, Jia Hao Chih, Yu-Ting Lai, Yi-Wei Tsai, Jhih-Min Lin, Chao-Hsin Chien, Ying-Tsan Tang
NVDimm-FE: A High-density 3D Architecture of 3-bit/c 2TnCFE to Break Great Memory Wall with 10 ns of PGM-pulse, 1010 Cycles of Endurance, and Decade Lifetime at 103 °C
ER Hsieh, JK Chang, YT Tang, YJ Li, CW Liang, MY Lin, SY Huang, CJ Su, JC Guo, SS Chung
Characterization of Double HfZrO2 based FeFET toward Low-Voltage Multi-Level Operation for High Density Nonvolatile Memory
Z-F Lou, C-Y Liao, K-Y Hsiang, C-Y Lin, Y-D Lin, P-C Yeh, C-Y Wang, H-Y Yang, P-J Tzeng, T-H Hou, Y-T Tang, MH Lee
Visualizing Ferroelectric Uniformity of Hf1–x Zr x O2 Films Using X-ray Mapping
Shu-Jui Chang, Chih-Yu Teng, Yi-Jan Lin, Tsung-Mu Wu, Min-Hung Lee, Bi-Hsuan Lin, Mau-Tsu Tang, Tai-Sing Wu, Chenming Hu, Ethan Ying-Tsan Tang, Yuan-Chieh Tseng
NLS based Modeling and Characterization of Switching Dynamics for Antiferroelectric/Ferroelectric Hafnium Zirconium Oxides
YC Chen, KY Hsiang, YT Tang, MH Lee, P Su
Improving Edge Dead Domain and Endurance in Scaled HfZrOx FeRAM
Yu-De Lin, Po-Chun Yeh, Ying-Tsan Tang, Jian-Wei Su, Hsin-Yun Yang, Yu-Hao Chen, Chih-Pin Lin, Po-Shao Yeh, Jui-Chin Chen, Pei-Jer Tzeng, Min-Hung Lee, Tuo-Hung Hou, Shyh-Shyuan Sheu, Wei-Chung Lo, Chih-I Wu
Deep insights into Interface Effects to achieve Low-voltage Operation (< 1.2 V), Low Process Temperature, and First-Principle Calculation
Y-T Tang, T-M Wu, C-L Fan, Y-M Lai, K-Y Hsiang, C-Y Liao, S-H Chang, T-Y Yu, P Su, M-T Chang, B-H Huang, C Hu, S-J Chang, M-F Chang, M-H Lee
Pulse-Mediated Electronic Tuning of the MoS2–Perovskite Ferroelectric Field Effect Transistors
KW Chen, SJ Chang, EYT Tang, CP Lin, TH Hou, CH Chen, YC Tseng
3D Scalable, Wake-up Free, and Highly Reliable FRAM Technology with Stress-Engineered HfZrOx
YD Lin, HY Lee, YT Tang, PC Yeh, HY Yang, PS Yeh, CY Wang, JW Su, SH Li, SS Sheu, TH Hou, WC Lo, MH Lee, MF Chang, YC King, CJ Lin
A Comprehensive Kinetical Modeling of Polymorphic Phase Distribution of Ferroelectric-Dielectrics and Interfacial Energy Effects on Negative Capacitance FETs
Y-T Tang, C-L Fan, Y-C Kao, Nicola Modolo, C-J Su, T-L Wu, K-H Kao, P-J Wu, S-W Hsaio, Artur Useinov, Pin Su, W-F Wu, G-W Huang, J-M Shieh, W-K Yeh, Y-H Wang
Self-organized pairs of Ge double quantum dots with tunable sizes and spacings enable room-temperature operation of qubit and single-electron devices
KP Peng, CL Chen, YT Tang, D Kuo, T George, HC Lin, PW Li
Impact of Hafnium Oxide-Based Ferroelectric Material on Monolayer Black Phosphorus Transistor for Negative Capacitance and Memory Application
KT Chen, YF Chung, YT Tang, ST Chang, MH Lee
A Comprehensive Study of Polymorphic Phase Distribution of Ferroelectric-Dielectrics and Interfacial Layer Effects on Negative Capacitance FETs for Sub-5 nm Node
Y-T Tang, C-J Su, Y-S Wang, K-H Kao, T-L Wu, P-J Sung, F-J Hou, C-J Wang, M-S Yeh, Y-J Lee, W-F Wu, Huang G-W, Shieh J-M, W-K Yeh, Y.-H Wang
Sub-60 mV/dec ferroelectric HZO MoS2negative capacitance field-effect transistor with internal metal gate: The role of parasitic capacitance
M Si, C Jiang, CJ Su, YT Tang, L Yang, W Chung, MA Alam, PD Ye
TSV-free FinFET-based Monolithic 3D+-IC with computing-in-memory SRAM cell for intelligent IoT devices
Fu-Kuo Hsueh, Hsiao-Yun Chiu, Chang-Hong Shen, Jia-Min Shieh, Ying-Tsan Tang, et al.
Investigation of strain‐induced phase transformation in ferroelectric transistor using metal‐nitride gate electrode
YC Chiu, CH Cheng, CY Chang, YT Tang, MC Chen
Nano-scaled Ge FinFETs with low temperature ferroelectric HfZrOx on specific interfacial layers exhibiting 65% S.S. reduction and improved ION
C-J Su, Y-T Tang, Y-C Tsou, P-J Sung, F-J Hou, et al.
Ge nanowire FETs with HfZrOx ferroelectric gate stack exhibiting SS of sub-60 mV/dec and biasing effects on ferroelectric reliability
C-J Su, T-C Hong, Y-C Tsou, F-J Hou, P-J Sung, M-S Yeh, C-C Wan, K-H Kao, Y-T Tang, et al.
One-transistor ferroelectric versatile memory: Strained-gate engineering for realizing energy-efficient switching and fast negative-capacitance operation
YC Chiu, CH Cheng, CY Chang, YT Tang, MC Chen
A numerical study of Si-TMD contact with n/p type operation and interface barrier reduction for sub-5 nm monolayer MoS2FET
Ying-Tsan Tang, Kai-Shin Li, Lain-Jong Li, Ming-Yang Li, Chang-Hsien Lin, et al.
A Hybrid Implant Doping Technique with Plasma Immersion Ion Implant (PIII) Process for 10 nm Fin Cannel of 3D-FET
Yi-Ju Chen, Ying-Tsan Tang, Chang-Hsien Lin, Chun-Chi Chen, et al.