Contact Info
- Lab: E6-419
- Ext: 35156
- Email: yttang@ee.ncu.edu.tw
Research Interests
- High-k Dielectric Materials
- Ferroelectric Non-volatile Memory & Low Power Devices
- Computational Modeling of Emerging Semiconductor Materials
- Simulation of Si-based Quantum Computer Devices
- Silicon Photonic Memory
Professional Experience
- DAAD Junior Scientist, Technical University of Berlin
- Post Doctorate, Center for Interdisciplinary Science, NCTU
- Principal Engineer, TSMC Inc. (2011-2015)
- NDL, Hsinchu (2015-2018) | TSRI, Hsinchu (2018-2021)
- Assoc. Prof. (Joint), NCHU (2020-2021)
- Adj. Res. (Asst.-Assoc.), TSRI (2024-now)
Patents
Patents & Intellectual Property
Total: 5
2 Granted
3 Pending
Granted
Multi-Bit Ferroelectric Transistor, Preparation Method Thereof, and Content Addressable Memory Cell
Patent No.: I912007 (Taiwan)
Date: XXXX/XX/XX
Granted
Angstrom-Stacked Metal-Ferroelectric-Metal Structure
Patent No.: I839215 (Taiwan)
Date: XXXX/XX/XX
Pending
Fabrication of Nanoscale Analog Ultra-High-k Variable Capacitor
Region: US Patent
Status: Under Review
Pending
Vertically Symmetric Stacked Fin-Based Double Quantum Dot Structure
Region: US Patent
Status: Under Review
Pending
High-Temperature Tolerant Neuromorphic Computing Realized by XXX Cooling Electrode
Region: US Patent
Status: Under Review
Laboratory Members
Graduate Students
M1 Students (Class of 2025)
Qiu
Qiu Ying-Xuan
Research: CIM
Zhang
Zhang Quan-Can
Research: (TBD)
Li
Li Zi-Xi
Research: (TBD)
Lin
Lin Kui-Huan
Research: (TBD)
Dai
Dai Chen-Xu
Research: (TBD)
Lin
Lin You-An
Research: (TBD)
Huang
Huang Yan-Ling
Research: (TBD)
Liu
Liu Wei-Kai
Research: (TBD)
M2 Students (Class of 2024)
Zeng
Zeng Wei-Guo
Research: (TBD)
Yang
Yang Hua
Research: (TBD)
Lai
Lai Wei-Yuan
Research: (TBD)
Meng
Meng Wei-Cheng
Research: (TBD)
Xu
Xu Zhong-Hao
Research: (TBD)
Class of 2023
Chen
Chen Hao-Ming
Thesis: (TBD)
Tsai
Tsai Cheng-Yan
Thesis: (TBD)
Chen
Chen Rui-Yi
Thesis: (TBD)
Xiong
Xiong Miao-Hua
Thesis: (TBD)
Huang
Huang Sheng-Cang
Thesis: (TBD)
Chen
Chen You-Qi
Thesis: (TBD)
Class of 2022
Chen
Chen Zheng-Kai
Thesis: Development of Multifunctional Gate (TiN/Mo/TiOxNy/SL-HZO) Stacked Ferroelectric Memory Technology with High Thermal Stability, Long Endurance (>1011 cycles), and Instant Read Capability
Wu
Wu Yong-Feng
Thesis: Physical Analysis of High Thermal Stability, Low Voltage Variability, and High Cycle Endurance (>1011) Based on Ge-Sb-Te-C-N Non-Arsenide Selectors
Bai
Bai Jia-Shuo
Thesis: Study on Ferroelectric Transistors Achieving 2.3V Large Memory Window (3-bit/cell), Instant Read, and 10? Write Cycles with High Accuracy for Machine Learning
Tsai
Tsai Yu-Zi
Thesis: Realization of Fully BEOL-Compatible Non-Volatile Memory Based on IGZO Dual-Transistors and Ferroelectric Capacitors
Class of 2021
Liu
Liu Cheng-Rui
Thesis: Low-Voltage Ferroelectric Capacitors with H2 Plasma-Treated Ultra-Thin IGZO Seed Layer for 30ns/3V Read/Write Speed and High-Density 3-Bit-Per-Cell FeNAND Flash Memory
Chen
Chen Yu-Ting
Thesis: Process Technology and Reliability Analysis of 3-Bit Ferroelectric Field-Effect Transistors Achieving Instant Read and Long Endurance (>10^12 cycles)
Alumni
Wang
Wang Sheng-Min
UMC Pre-offer
Thesis: Study on Multifunctional Gate and HfO2/ZrO2 Superlattice Stacks for High-Temperature Retention, Multi-Level Storage Cells, and High-Endurance Ferroelectric Transistors