Novel Semiconductor Channel Materials
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Oxide Semiconductors
IGZO, X:SnO, TeO2
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High-Power Semiconductor Materials
AlN-BASED
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Computing-in-Memory (CIM) Unit Design
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Quantum Logic Gates
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First-Principles Calculation & Phase Diagram Analysis
Hf-based High-K material: Superlattice geometry, Leakage paths, Oxygen vacancy diffusion, Ferroelectric phase transition
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High-k Dielectric Device Design for DRAM
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Silicon Photonics
Material Development and Optical Modulator Device Design
Advanced Memory Material & Device
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Ferroelectric MemoryFeCap FeFET FeNAND
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Phase Change MemoryPCM OTS-Selector
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DRAM
Super-lattice High-K
Electrical Measurement
FeCap
PUND
IV
CV
NLS
Endurance
Retention
FeFET
Id-Vg
Speed
QSCV
Endurance
Retention
The lab is equipped with comprehensive high-frequency and low-frequency electrical measurement capabilities, ranging from material property analysis to device reliability testing.