2007/05

With cooperation between our group and IntelliEPi, a composite emitter InAlAs-InP/GaAsSb DHBT has been presented in APL. The base-emitter junction problems were solved with composite emitter, which demonstrated the similar device performance to InAlAs/GaAsSb HBT.

2007/05

The 1st comprehensive study on the dc behavior of GaN HBT. We present an equivalent circuit model to study the leakage and Schottky characteristics of GaN HBT. The result is published in SSE including both common IV and Gummel plot.

2007/04

After the ZnO/GaN diode was presented and characterized (2007/03 APL), the 1st GaN/ZnO HBT was fabricated and characterized. This is the 1st Zno/GaN HBT in the world with current gain > 5 at RT, and > 100 at low Temp.

2007/03

A ZnO/GaN diode was presented and characterized (2007 APL), and its application to GaN HBT was proposed.

2007/03

A novel collector-up HBT was presented. The idea, simulation and experimental results were published (2007 IEICE TED). And the ROC patent was granted.

2007/01

The first and only flip-chip assembled GaAs pHEMT Ka-band oscillator was fabricated and published (2007 IEEE MWCL)..

2007/01

Undergraduate students wanted! Different research projects including RF circuit design, High-speed electronics design and simulation, and Bio-sensor chip.

A new record of CMOS photodetector using TSMC standard 0.18um process.(IEEE PTL)

2006 IEDMS Excellent Paper Award, for “36 GHz Bandwidth Optoelectronic integrated circuit with Flip-chip Assembled InP HBT/Evanescently Coupled Photodiode”.